Formation of Ohmic contacts in III-nitride light emitting devices

ABSTRACT

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of application Ser. No. 09/755,935,filed Jan. 5, 2001, now U.S. Pat. No. 6,657,300 now abandoned, which isa continuation-in-part of application Ser. No. 09/092,065, filed Jun. 5,1998. Application Ser. Nos. 09/755,935 and 09/092,065 are incorporatedherein by reference.

BACKGROUND

1. Field of Invention

The present invention is related to the manufacture of III-V lightemitting and laser diodes, particularly towards improving thecharacteristics of the electrical contact to the p-type portion of thediode.

2. Description of Related Art

Gallium nitride (GaN) compounds have wavelength emissions in the entirevisible spectrum as well as part of the UV. FIG. 1 illustrates a typicalGaN-based light emitting diode (LED). Currently, most GaN-based LEDs areepitaxially grown on a sapphire or silicon carbide (SiC) substrate. Adouble hetero-structure that includes a nucleation layer, n-type layer,active region, p-type AlGaN layer, and a p-type layer of GaN is formedon the substrate. In general, the ability to fabricate ohmic contacts tothe p-type layer is essential for the realization of reliable lightemitting diodes and laser diodes. Ohmic contacts to p-type GaN aredifficult to achieve because the attainable hole concentration islimited for Mg-doped III-nitride based semiconductors. In addition, manylight-emitting diodes and vertical cavity surface-emitting laser diodesuse thin, transparent metal contacts. The choice of metals is limitedand metal layers need to be thin, e.g. <15 nm, to reduce lightabsorption. Because there is poor lateral current spreading in p-typeGaN, the metal layers typically cover nearly the entire device area.

P-type conductivity for GaN is achieved by doping with Mg, whichsubstitutes for gallium in the GaN lattice and acts as an acceptor(Mg_(Ga)). Mg_(Ga) introduces a relatively deep acceptor level into theband gap of GaN. As a consequence, only ˜1% of the incorporated Mgacceptors are ionized at room temperature. To illustrate, a Mgconcentration ([Mg]) of ˜5e19 cm⁻³ is needed to achieve a roomtemperature hole concentration of ˜5e17 cm⁻³. Further, Mg-doped GaNrequires a post-growth activation process to activate the p-typedopants. The post-growth activation process may be, for example, thermalannealing, low-energy electron-beam irradiation, or microwave exposure.For conductivity-optimized Mg-doped GaN layers, [Mg]<5 e19 cm⁻³, theacceptor concentration (N_(A)) is about equal to the atomic Mgconcentration and the resistivity can be around 1 Ωcm or less. Theselayers may be referred to as “p-type conductive layers”. Increasing theMg content beyond approximately 5e19 cm⁻³ does not translate to higheracceptor concentration. Typically, a reduction of N_(A) is observed whenthe [Mg] exceeds a certain maximum concentration and the layer becomesresistive.

SUMMARY

P-type layers of a III-nitride-based light-emitting device are optimizedfor formation of an Ohmic contact with metals. In some embodiments, ap-type transition layer is formed between a p-type conductivity layerand the metal contact. The p-type transition layer may be a GaN layerwith a resisitivity greater than 7 ohm-centimeters, a III-nitride layer,a III-nitride layer with added As or P, or a superlattice withalternating highly doped or elemental dopant sublayers and lightly dopedor undoped sublayers.

In some embodiments, the p-type layer is continuous with varying levelsof dopant. The concentration of dopant in the region of the p-type layeradjacent to the p-contact is greater than the concentration of dopant inthe region of the p-type layer adjacent to the active region. The p-typelayer may also have a varying composition, for example of Al or In orboth.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a prior art light-emitting diode.

FIG. 2 illustrates a light-emitting diode according to a firstembodiment of the present invention.

FIG. 3 illustrates N_(A) plotted as a function of [Mg].

FIGS. 4A and 4B demonstrate the I-V characteristics for a Ni/Au—Mg-dopedGaN contact in “back-to-back” configuration for the metals deposited ona p-type conductive layer (A) and on a p-type transition (B) layer.

FIG. 5A demonstrates the relationship between p-contact barrier heightand resistivity for Mg-doped GaN layers.

FIG. 5B demonstrates the effect of contact annealing on theNi/Au—Mg-doped GaN contact barrier for p-type conductive and for p-typetransition layers where the p-type conductivity was activated by twodifferent RTA (5 min) activation processes (600° C. and 850° C.).

FIG. 6 demonstrates the relationship between bandgap energy and latticeparameter for the AlInGaN material system.

FIG. 7 illustrates a light-emitting diode according to a thirdembodiment of the present invention.

FIG. 8 illustrates a light-emitting diode according to a fourthembodiment of the present invention.

FIG. 9 illustrates the variation of Al and In composition and Mgconcentration across the p-type layer of several examples of oneembodiment of the light-emitting diode illustrated in FIG. 8.

DETAILED DESCRIPTION

FIG. 2 schematically illustrates a GaN light-emitting diode 10 accordingto a first embodiment of the present invention. A nucleation layer 12 isgrown over a substrate 14, for example A1 ₂O₃, SiC, or GaN. An n-typelayer 16 of GaN that is doped with Si is fabricated over the nucleationlayer 12. An active region 18 of InGaN is fabricated over the n-typelayer 16. A p-type layer 20 of AlGaN:Mg is fabricated over the activeregion 18, followed by a p-type layer 22 of Mg-doped GaN that has beenoptimized for conductivity (p-type conductivity layer), followed by ap-type transition layer 24 deposited over the p-type layer 22. Metalcontacts 26A and 26B are applied to the n-type layer 16 and the p-typetransition layer 24, respectively. The metal contacts may be transparentor opaque.

P-type transition layer 24 is optimized to form a good Ohmic contactwith the metal layer. In the first embodiment, the material of p-typetransition layer 24 is a GaN-based layer that contains a higher atomicMg but a lower acceptor/hole concentration when compared to the p-typeconductivity layer 22. In FIG. 3, the dependence of N_(A) is illustratedas a function of [Mg]. Curve 30 illustrates Mg concentrations andresulting acceptor concentrations for a specific set of growthconditions. Other growth conditions may cause the curve to shift up ordown or left or right, but the shape of the curve is expected to beapproximately the same as curve 30 regardless of the growth conditions.As illustrated by curve 30, when a GaN-based film is highly doped withMg, the acceptor concentration decreases, thus the film becomes highlyresistive. This behavior is atypical of other III-V semiconductors.

Exemplary Mg and acceptor concentrations for p-type conductivity layersare shown in region 34. Typically, p-type conductivity layer 22 has a[Mg] less than approximately 5e19 cm−3, N_(A)˜[Mg], and resistivities ofabout 1 Ωcm or less. In contrast, p-type transition layer 24 is a highlyresistive film having a [Mg]>about 5e19 cm⁻³, and N_(A)<<[Mg]. The highMg doping may be achieved by adjusting the growth conditions to promotethe Mg incorporation into the solid phase, for example by increasing theMg/Ga ratio in the gas phase. The Mg and acceptor concentrations forembodiments of p-type transition layer 24 are shown in region 32. Region32 of FIG. 3 illustrates an approximate range of Mg and acceptorconcentrations. In some embodiments, the Mg and acceptor concentrationsof p-type transition layer 24 may be outside of region 32. Transitionlayer 24 forms an Ohmic contact with metals, e.g. transparent ornon-transparent contacts of Au, Ni, Al, Pt, Co, Ag, Ti, Pd, Rh, Ru, Re,and W, or alloys thereof.

The p-type dopants for p-type transition layer 24 are selected from theGroup II family which includes Be, Mg, Ca, Sr, Zn, and Cd. A preferreddopant is Mg, which may be co-doped with a Group VIA element, such as O,S, Se, and Te.

In one example of the first embodiment, the thickness of p-typetransition layer 24 ranges between about 10 and about 200 nm. As aconsequence, the contribution of p-type transition layer 24 to theseries resistance is negligible. FIG. 4B demonstrates the I-Vcharacteristics for a Ni/Au metal p-type GaN contact in “back-to-back”(metal-semiconductor-semiconductor-metal) configuration for a Mg-dopedGaN layer optimized for Ohmic contact formation (p-type transition layeraccording to the first embodiment). The forward current (I) exhibits alinear dependence on the voltage (V) indicating that the contact isOhmic. FIG. 4A demonstrates the situation for a p-type conductivitylayer. The I-V curve indicates the presence of a barrier to currentflow.

The p-type transition layer forms a contact with the metal layer thatexhibits a barrier height<about 0.5 eV and almost Ohmic characteristics.If the contact is formed by depositing the metal directly on the p-typeconductivity layer the barrier height is>about 1.0 eV. Utilization ofcontacts with such high barrier height would increase the forwardvoltage of the diodes and reduce their total power efficiency. In FIG.5A, the barrier height is illustrated as a function of bulk resistivityof the transition material. Mg-doped GaN layers that have a lowresistivity exhibit a high barrier height when combined with a metallayer to form a contact. As illustrated in FIG. 5A, a preferredembodiment of the p-type transition layer, that is, an embodiment with abarrier height less than about 0.5 eV, exhibits a bulk resistivitybetween about 7 Ωcm and about 250 Ωcm. Such p-type transition layershave the smallest impact on the driving voltage of the device. Thedriving voltage of such devices is less than or equal to about 3.5volts. In other embodiments, the bulk resistivity may be greater than250 Ωcm. The differences in barrier heights of the p-type transition andconductivity layer may be explained by differences in the out-diffusionof Mg, redistribution of hydrogen near the surface of the Mg-doped GaNfilms, different properties of the surface, or formation of magnesiumnitride inclusions in the highly Mg-doped transition layer.

The barrier height may be further lowered through contact annealing.FIG. 5B demonstrates the effect of contact annealing in a RTA system onthe barrier height of contacts formed with p-type conductivity layersand contacts formed with p-type transition layers. The y-axis shows thebarrier height, and the x-axis shows the temperature of a thermal annealto activate the p-type dopant in either type of layer. FIG. 5B thusillustrates the effect of two different anneals, a thermalacceptor-activation anneal and a contact anneal, called “contact RTA” onFIG. 5B.

Contact annealing reduces the barrier heights for both the transitionlayer and the p-type conductivity layer. For example, the barrier heightfor a p-type conductivity layer thermally annealed at 600° C. drops fromabout 2.7 eV before the contact anneal to about 2.3 eV after the contactanneal, and the barrier height for a p-type transition layer thermallyannealed at 600° C. drops from about 0.8 eV before the contact anneal toabout 0.4 eV after the contact anneal. However, even after contactannealing, contacts formed with p-type conductivity layers exhibitsignificantly higher barrier heights than contacts formed with p-typetransition layers, e.g. about 2.3 eV for a p-type conductivity layercompared to about 0.4 eV for a p-type transition layer. Thus, thoughcontact annealing does reduce the barrier height for a p-typeconductivity layer contact, the effect is not enough to reduce thebarrier height to that of a p-type transition layer contact.

The results shown in FIG. 5B also show that the observed barrier heightreductions are not strongly dependent on the temperature of the acceptoractivation process, working equally well for activation at 600° C. and850° C. The method to reduce the barrier height by contact annealing isdescribed by Nakamura et al., Appl. Phys. Lett. 70, 1417 (1997)“Room-temperature continuous-wave operation of InGaN multi-quantum-wellstructure laser diodes with a lifetime of 27 hours”.

In a second embodiment, p-type transition layer 24 is not limited to Mgdoped GaN, but is any III-V material. P-type transition layer 24according to the second embodiment is homogeneously doped. P-typetransition layer 24 according to the second embodiment may be, forexample, InN, InGaN, AlInGaN, AlN, or AlGaN. When p-type transitionlayer 24 is InGaN, typically the group III compounds in the crystal areless than about 40% In, but the amount of In can range from 0-100% ofthe group III compound. When p-type transition layer 24 is AlGaN,typically the group III compounds in the crystal are less than about 20%Al, but the amount of Al can range from 0-100% of the group IIIcompound.

FIG. 6 illustrates the relationship between band gap and latticeparameter for compositions of aluminum, indium, gallium, and nitrogen.In FIG. 6, the squares represent the binary compounds AlN, GaN, and InN,the lines connecting the squares represent the ternary compounds AlGaN,AlInN, and InGaN with varying compositions of each group III material,and the shaded triangle between the lines represents the quaternarycompound AlInGaN with varying compositions of each group III material.Line 60 represents an example lattice constant. The dots represent thecomposition of potential LED device layers. The injection layer refersto p-type conductivity layer 22. The simplest devices to fabricate havereasonably close lattice constants for each of the device layers. Thus,FIG. 6 illustrates that once the compositions of device layers have beenselected, the composition of the p-type transition layer may be selectedto lattice-match the p-type transition layer to the device layers, andto optimize the p-type transition layer for Ohmic contact.

P-type transition layer 24 according to the second embodiment may alsobe any III-nitride arsenide compound, III-nitride phosphide compound, orIII-nitride arsenide phosphide compound, such as GaNAs, GaNP, or GaNAsP.The addition of even a small amount of As or P can significantly lowerthe bandgap of III-nitride semiconductors.

In the first and second embodiments of the invention, the p-type layersof the device are homogeneously doped. In the third and fourthembodiments, described below, at least one of the p-type layers of thedevice has a varying concentration of dopant.

FIG. 7 illustrates a third embodiment of the invention where transitionlayer 24 (FIG. 2) is a doping superlattice. In many III-Vsemiconductors, a doping superlattice can achieve higher levels ofdoping than homogeneously doped layers. This is because in many III-Vsemiconductors, a heavily p-doped thick device layer exhibits poorsurface quality. Accordingly, heavily doped layers and lightly doped orundoped layers are alternated in order to form a heavily doped structurewith improved surface characteristics.

In a first example of the third embodiment, transition layer 24 consistsof sets 70 of alternating highly doped and lightly doped or undopedlayers. Each set of layers 70 has a layer 71 of highly Mg-doped materialon the bottom and a layer 72 of undoped or lightly Mg-doped material onthe top. The designations “bottom” and “top” are arbitrary, such thateither type of sublayer may be adjacent to both the p-type conductivelayer and the metal layer. Sublayers 71 and 72 range in thickness from 1nm to 20 nm. In one example of the third embodiment, each of sublayers71 and 72 is about 10 nm thick and transition layer 24 includes 10 setsof sublayers such that transition layer 24 is 200 nm thick. Highly dopedlayer 71 has a Mg concentration ranging from about 1e20 cm⁻³ to about5e21 cm⁻³. Lightly doped layer 72 has a Mg concentration ranging fromundoped to about 1e20 cm⁻³.

In a second example of the third embodiment, rather than a heavily dopedlayer, layer 71 is a layer of elemental dopant. Thus, in this example,layer 72 may be Mg-doped or undoped GaN or AlInGaN and layer 71 may beelemental Mg.

FIG. 8 illustrates a fourth embodiment of the invention. A p-type layer28 separates active InGaN region 18 and metal layer 26B. P-type layer 28is between 5 nm and 200 nm thick. P-type layer 28 is doped to providefor Ohmic contact formation with metal layer 26B and hole injection intoactive region 18. The composition and concentration are varied throughlayer 28. The variable doping in p-type layer 28 eliminates the need fora separate p-type conductivity layer.

FIG. 9 illustrates one example of varying Mg content and four examples,labeled A-D, of varying composition in p-type layer 28, according to thefourth embodiment. Curve 82 illustrates one example of the Mgconcentration in layer 28. The amount of Mg in layer 28 increases fromabout 1e19 cm⁻³ in the region adjacent to active region 18 to about 1e20cm⁻³ in the region adjacent to metal layer 26B. The concentration of Mgin the region of layer 28 adjacent to active region 18 may vary fromabout 1e18 cm⁻³ to about 5e19 cm⁻³. The concentration of Mg in theregion of layer 28 adjacent to metal layer 26B may vary from about 5e19cm⁻³ to about 1e21 cm⁻³. Curve 81 of example A illustrates a firstexample of varying composition where Al composition of layer 28 isvaried. The amount of Al in layer 28 decreases from about 20% in theregion adjacent to active region 18 to about 0% in the region adjacentto metal layer 26B. The presence of Al provides for efficient holeinjection into the active layer, thus the Al composition isadvantageously maximized in the region of layer 28 adjacent to activeregion 18. Curve 83 of example B illustrates an example where the Incomposition in layer 28 is varied. The amount of In increases from aboutzero percent in the region adjacent to active region 18 to about 40% inthe region adjacent to metal layer 26B. The presence of In lowers thebandgap of the material and thereby provides for efficient Ohmiccontact, thus the In composition is maximized near the metal contact.There may be no In present in the portion of the layer adjacent theactive layer.

In examples C and D, both the Al and the In compositions are varied. Inexample C, as the composition of Al is reduced, the Al is replaced withIn. As illustrated in curve 84, the composition of Al is zero near metalcontact 26B. Similarly, as illustrated in curve 85, the composition ofIn is zero near active region 18. Thus, layer 28 varies from AlGaNimmediately adjacent to the active region, to AlInGaN in the regionbetween the active region and the metal contact, to InGaN immediatelyadjacent to the metal contact. In example D, both Al and In are presentin all areas of layer 28. As illustrated by curve 86, the Al compositionis reduced from the active region to the metal contact, but neverreaches zero composition. Similarly, as illustrated by curve 87, the Incomposition is reduced from the metal contact to the active region, butnever reaches zero composition. Layer 28 is thus entirely AlInGaN, butvaries from more Al than In near the active region to more In than Alnear the metal contact.

FIG. 9 illustrates just a few examples of the variation of compositionand concentration in p-type layer 28 according to the fourth embodiment.In other examples, Al is present only in the half of p-type layer 28adjacent to active region 18 and In is present only in the half ofp-type layer 28 adjacent to metal contact 26B. In other examples, thecomposition of other group III or group V elements are varied. In stillother examples, the concentration of a dopant other than Mg is varied.Further, As and P may be added to layer 28 to reduce the bandgap oflayer 28, typically in the region of layer 28 that is adjacent to thecontact. In order to form good contact, the lowest bandgap material isplaced next to the metal contact. Since As and P reduce the bandgap ofthe material, As and P are added to the 1 to 2 nm of layer 28 adjacentto the contact in order to improve the characteristics of the contact.In devices which incorporate As or P into p-type layer 28, As or P mayaccount for less than 3% of the of the group V materials.

While particular embodiments of the present invention have been shownand described, it will be obvious to those skilled in the art thatchanges and modifications may be made without departing from thisinvention in its broader aspects and, therefore, the appended claims areto encompass within their scope all such changes and modifications asfall within the true spirit and scope of this invention. For example,while the layer is illustrated as having been grown by MOCVD, it mayalso be fabricated by the techniques of MBE, HVPE, as well asevaporation, sputtering, diffusing, or wafer bonding.

1. A light-emitting diode comprising: a substrate; an n-type layer ofGaN, formed over the substrate; an active region, formed over the n-typelayer; a p-type layer, formed over the active layer, the p-type layerhaving a varying composition and a varying concentration of a dopant; ann-type contact and a p-type contact, the n-type contact being connectedto the n-type layer, the p-type contact being connected to the p-typelayer.
 2. The light-emitting diode of claim 1, wherein the p-type layerdopant is a Group II dopant selected from Be, Mg, Ca, Sr, Zn, Cd, and C.3. The light-emitting diode of claim 2, wherein the Group II dopant ismagnesium and the p-type layer further comprises a co-dopant selectedfrom Si, Ge, O, S, Se, and Te.
 4. The light-emitting diode of claim 1,wherein the p-type layer comprises a material selected from III-nitride,III-nitride arsenide, III-nitride phosphide, and III-nitride arsenidephosphide.
 5. The light-emitting diode of claim 1, wherein the p-typelayer has a thickness between 5 and 200 nm.
 6. The light-emitting diodeof claim 1, wherein a first concentration of the dopant in a region ofthe p-type layer adjacent to the active region is less than a secondconcentration of the dopant in a region of the p-type layer adjacent tothe p-type contact.
 7. The light-emitting diode of claim 6, wherein thedopant is magnesium and the first concentration is about 1e18 cm⁻³ toabout 5e19 cm⁻³.
 8. The light-emitting diode of claim 6, wherein thedopant is magnesium and the second concentration is about 5e19 cm⁻³ toabout 1e21 cm⁻³.
 9. The light-emitting diode of claim 1 wherein thep-type layer comprises a varying composition of aluminum.
 10. Thelight-emitting diode of claim 9 wherein the composition of aluminumvaries from about 20% in a region of the p-type layer adjacent to theactive region to about 0% in a region of the p-type layer adjacent tothe p-type contact.
 11. The light emitting diode of claim 7 wherein thep-type layer comprises a varying composition of indium.
 12. The lightemitting diode of claim 17 wherein the composition of indium varies fromabout 0% in a region of the p-type layer adjacent to the active regionto about 40% in a region of the p-type layer adjacent to the p-typecontact.
 13. The light emitting diode of claim 7 wherein a drivingvoltage of the light emitting diode is less than about 3.5 volts.